Electronically stimulated degradation of silicon solar cells
- Jan SchmidtK. BotheDaniel MacdonaldJ. AdeyR. JonesD. W. Palmer
- 1 January 2006
Physics, Materials Science
Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been…
Theory of boron-vacancy complexes in silicon
- J. AdeyR. JonesD. W. PalmerP. BriddonS. Öberg
- 26 April 2005
Physics
The substitutional boron-vacancy ${\mathrm{B}}_{s}\mathrm{V}$ complex in silicon is investigated using the local density functional theory. These theoretical results give an explanation of the…
Enhanced dopant solubility in strained silicon
- J. AdeyR. JonesP. Briddon
- 3 December 2004
Physics, Materials Science
The effect of biaxial strain on the solubility of the common donor arsenic and acceptor boron is calculated using spin-polarized local density functional theory. The change in solubility with strain…
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC
- E. FretwurstJ. Adey N. Zorzi
- 21 October 2005
Physics, Engineering
Degradation of boron-doped Czochralski-grown silicon solar cells.
- J. AdeyRodney H. JonesD. W. PalmerP. BriddonS. Öberg
- 30 July 2004
Engineering, Materials Science
The formation mechanism and properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation is investigated using density functional…
Optical and electrical activity of boron interstitial defects in Si
- J. AdeyR. JonesP. BriddonJ. Goss
- 8 October 2003
Physics, Materials Science
Density functional theory is used to investigate boron interstitial clusters and defects formed with carbon and oxygen. Using data from experimental techniques such as deep level transient…
Identification of boron clusters and boron-interstitial clusters in silicon
- J. AdeyJ. GossR. JonesP. Briddon
- 30 June 2003
Physics, Materials Science
The identity of boron clusters and boron interstitial clusters in Si, produced by radiation or implantation, has been studied theoretically. Local vibration modes of the single-boron interstitial and…
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